INFRARED STUDY OF SHALLOW ACCEPTOR STATES IN GAAS

被引：108

作者：

KIRKMAN, RF ^{[1
]}

STRADLING, RA ^{[1
]}

LINCHUNG, PJ ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1978年 / 11卷 / 02期

关键词：

D O I：

10.1088/0022-3719/11/2/024

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：419 / 433

页数：15

共 16 条

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[4] INFRARED STUDIES OF ACCEPTOR STATES IN EPITAXIAL FILMS OF GAAS [J].

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[5]

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[6] ZEEMAN PERTURBATIONS ON SHALLOW ACCEPTOR STATES IN GERMANIUM [J].

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[7] SHALLOW IMPURITY STATES IN INSB IN MAGNETIC-FIELDS - HIGH-FIELD DONOR STATES AND ACCEPTOR STATES [J].

LINCHUNG, PJ ;

HENVIS, BW .

PHYSICAL REVIEW B, 1975, 12 (02) :630-640

[8]

LINCHUNG PJ, 1976, P INT C PHYSICS SEMI, P587

[9] ANGULAR MOMENTUM THEORY AND LOCALIZED STATS IN SOLIDS - INVESTIGATION OF SHALLOW ACCEPTOR STATES IN SEMICONDUCTORS [J].

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[10]

LIPARI NO, 1972, P INT C PHYS SEMICON, P1009

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