EPITAXIAL GROWTH OF SILICON IN HORIZONTAL REACTORS

被引：0
作者：
RUNDLE, PC
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INTERNATIONAL JOURNAL OF ELECTRONICS | 1968年 / 24卷 / 05期
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码：405 / &
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