DC AND HIGH-FREQUENCY CHARACTERISTICS OF BUILT-IN CHANNEL MOS-FETS

被引：22
作者：
SCHMIDT, PE
DAS, MB
机构：
[1] PENN STATE UNIV,MAT RES LAB,UNIVERSITY PK,PA 16802
[2] PENN STATE UNIV,SOLID STATE DEVICE LAB,UNIVERSITY PK,PA 16802
来源：
SOLID-STATE ELECTRONICS | 1978年 / 21卷 / 03期
关键词：
D O I：
10.1016/0038-1101(78)90018-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：495 / 505
页数：11
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