ANALYSIS AND NUMERICAL MODELING OF SILICON-NITRIDE DEPOSITION IN A PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION REACTOR .2. SIMPLIFIED MODELING, SYSTEMATIC ANALYSIS AND COMPARISON WITH EXPERIMENTAL MEASUREMENTS

被引：10

作者：

DOLLET, A ^{[1
]}

COUDERC, JP ^{[1
]}

DESPAX, B ^{[1
]}

机构：

[1] ENSIGC,GEN CHIM LAB,CNRS,URA 192,F-31078 TOULOUSE,FRANCE

来源：

PLASMA SOURCES SCIENCE & TECHNOLOGY | 1995年 / 4卷 / 01期

关键词：

D O I：

10.1088/0963-0252/4/1/011

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

In this part of the work, an experimental and a theoretical analysis of the reactor behaviour were performed. The two-dimensional treatment of mass transfer equations was simplified to shorten the calculation time. The results so obtained were found to be in good agreement with those of the bidimensional modelling. The simplified model was used to perform a systematic analysis and the axial variations in deposition rate profile were analysed. Some theoretical estimations were compared with a set of experimental measurements of deposition rate profile and film and gas phase composition. Satisfactory agreement between calculations and experiments was found for various values of electrical power and silane percentage, indicating that the assumptions were, on the whole, realistic.

引用

页码：107 / 116

页数：10

共 7 条

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