Diode Forward and Reverse Recovery Model for Power Electronic SPICE Simulations

被引：52
|
作者：
Liang, Young-Chii [1 ]
Gosbell, Victor J. [1 ]
机构：
[1] Univ Sydney, Sch Elect Engn, Power Elect & Drives Grp, Sydney, NSW 2006, Australia
来源：
IEEE TRANSACTIONS ON POWER ELECTRONICS | 1990年 / 5卷 / 03期
关键词：
D O I：
10.1109/63.56526
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A pn-diode micro-model representing forward and reverse recovery phenomena is presented for power electronic simulation, especially using SPICEZ. The model is proposed to compensate the incompleteness of the diode model in current circuit simulation packages. In the forward recovery submodel, the diode bulk resistance modulation and its forward current dependence are included. In the reverse recovery submodel, the charge control equation for excess storage carriers is employed to simulate the detailed behavior. A procedure is described for extracting the model's physical parameters from data sheet information. The model is verified by a comparison of experimental results for several different tests with SPICE simulations. A discussion is given of extending the applicability of the micro-model to the simulation of p-i-n diode behavior.
引用
收藏
页码：346 / 356
页数：11
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