SOME MORPHOLOGICAL AND ELECTRICAL ASPECTS OF THIN VACUUM-EVAPORATED FILMS OF POLYTETRAFLUOROETHYLENE

被引：1

作者：

HOGARTH, CA

GOLESTANIAN, S

机构：

[1] Department of Physics, Brunel University, Middlcsex, Uxbridge

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1994年 / 77卷 / 03期

关键词：

D O I：

10.1080/00207219408926067

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Films of thickness in the range 50-1000 nm prepared by the vacuum evaporation of polytetrafluoroethylene (PTFE) were studied with a view to possible use as thin dielectric films. The structures were studied by microscopy, infrared absorption spectroscopy and X-ray absorption spectroscopy and X-ray diffraction, and the films were found to be of very differing character from the starting material. The resistivity of the deposited films lay in the range 3.5 +/- 0.5 x 10(5) OMEGA cm.

引用

页码：351 / 354

页数：4