A COMPARATIVE-STUDY OF O2/SIH4 AND N2O/SIH4 MIXTURES FOR SIO2 DEPOSITION IN A MICROWAVE AFTERGLOW

被引：6

作者：

DELPUPPO, H ^{[1
]}

DESMAISON, J ^{[1
]}

PECCOUD, L ^{[1
]}

机构：

[1] CENG,DLETI,F-38041 GRENOBLE,FRANCE

来源：

JOURNAL DE PHYSIQUE IV | 1993年 / 3卷 / C3期

关键词：

D O I：

10.1051/jp4:1993332

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Silicon dioxide films have been deposited in a microwave afterglow from N2O/SiH4 and O2/SiH4 mixtures. The effect of the pressure and of the substrate to silane injector &stance is investigated, and leads to conclude that the growth mechanism is diffusion limited. In complement to previous studies, the composition of films, obtained at several temperatures and oxidant flow rates, is determined. The gas nature has a low influence on stoichiometry (O/Si approximately 2 whatever the conditions are) but has an effect on the impurity content. Indeed, when N2O is used, nitrogen is incorporated but, at high temperature, the hydrogen content of the films is lower than for those made from O2. The impurities are thought to come from uneasily desorbed byproducts.

引用

页码：241 / 246

页数：6

共 15 条

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[2]

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