High Temperature, High Energy Density Dielectrics for Power Electronics Applications

Mn and/or rare earth-doped xCaTiO(3) - (1-x) CaMeO3 dielectrics, where Me=Hf or Zr and x=0.7, 0.8, and 0.9 were developed to yield materials with room temperature relative permittivities of epsilon(r) similar to 150-170, thermal coefficients of capacitance (TCC) of +/- 15.8% to +/- 16.4% from -50 to 150 degrees C, and band gaps of similar to 3.3-3.6 eV as determined by UV-Vis spectroscopy. Un-doped single layer capacitors exhibited room temperature energy densities as large as 9.0 J/cm(3), but showed a drastic decrease in energy density above 100 degrees C. When doped with 0.5 mol% Mn, the temperature dependence of the breakdown strength was minimized, and energy densities similar to room temperature values (9.5 J/cm(3)) were observed up to 200 degrees C. At 300 degrees C, energy densities as large as 6.5 J/cm(3) were measured. These observations suggest that with further reductions in grain size and dielectric layer thickness, the xCaTiO(3) - (1-x) CaMeO3 system is a strong candidate for integration into future power electronics applications. To further improve the high temperature, high field reliability of these material systems, rare earth donor doping has been utilized. Initially, 1 mol% doping with Dy, Gd, and Sm showed the most significant reduction in high temperature, high field conductivity. Further investigation of Dy co-doping with 0.5 mol% Mn, Mg, and (Mn+Mg) showed the most significant increase in Ca(Ti0.8Hf0.2)O-3 resistivity from 4.61 M Omega.m with only Mn doping to 176 GO. cm with Dy and Mg co-doping. Material systems were characterized using capacitance and dielectric loss vs. temperature, current-voltage (IV), UV-Vis spectroscopy for band gap determination, and polarization vs. field measurements.