Effects of Substrate Temperature and Ion Source Energy on Stress of Thin Film

The optical thin films of SiO2, TiO2 and Al2O3 arr prepared on GaAs substrates by using the electron beam evaporation method under different substrate temperatures and ion source energies, respectively. The stress distributions of these thin films arc measured, and the refractive indexes of these thin films prepared under different ion source energies arc also tested. The results show that, the surface stress distributions of these three kinds of thin films arc non-uniform, and the substrate temperature and ion source energy can be adjusted to reduce the stresses of these thin films effectively. The average minimum stresses of SiO2, TiO2 and Al2O3 thin films are 2.9, 8.4 and 25.1 MPa, respectively.