AN APPROXIMATE MODEL FOR THE GRADED-BASE TRANSISTOR

被引：4
作者：
GRUNG, BL
机构：
来源：
SOLID-STATE ELECTRONICS | 1981年 / 24卷 / 02期
关键词：
D O I：
10.1016/0038-1101(81)90013-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：165 / 171
页数：7
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