OPTIMIZATION OF SPUTTERED SNO2 FILMS AS GAS-SENSITIVE LAYERS FOR SUSPENDED-GATE FETS

被引：5
作者：
PESCHKE, M
HANSCH, W
LECHNER, J
LORENZ, H
RIESS, H
EISELE, I
机构：
[1] Institut für Physik, Fakultät für Elektrotechnik, Universität der Bundeswehr München
来源：
SENSORS AND ACTUATORS B-CHEMICAL | 1991年 / 4卷 / 1-2期
关键词：
D O I：
10.1016/0925-4005(91)80192-M
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
Tin oxide films have been prepared by reactive sputter deposition. Characterization with respect to stoichiometry and homogeneity has been carried out. Optimized films are incorporated as gas-sensitive layers in suspended-gate field-effect transitors. These sensors have been measured with respect to oxidizing and reducing gases.
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页码：157 / 160
页数：4
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