首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
SI-31 TRACER STUDIES OF THE OXIDATION OF SI, COSI2, AND PTSI
被引:39
作者
:
PRETORIUS, R
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CAPE TOWN,DEPT CHEM,RONDEBOSCH 7700,SOUTH AFRICA
UNIV CAPE TOWN,DEPT CHEM,RONDEBOSCH 7700,SOUTH AFRICA
PRETORIUS, R
[
1
]
STRYDOM, W
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CAPE TOWN,DEPT CHEM,RONDEBOSCH 7700,SOUTH AFRICA
UNIV CAPE TOWN,DEPT CHEM,RONDEBOSCH 7700,SOUTH AFRICA
STRYDOM, W
[
1
]
MAYER, JW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CAPE TOWN,DEPT CHEM,RONDEBOSCH 7700,SOUTH AFRICA
UNIV CAPE TOWN,DEPT CHEM,RONDEBOSCH 7700,SOUTH AFRICA
MAYER, JW
[
1
]
机构
:
[1]
UNIV CAPE TOWN,DEPT CHEM,RONDEBOSCH 7700,SOUTH AFRICA
来源
:
PHYSICAL REVIEW B
|
1980年
/ 22卷
/ 04期
关键词
:
D O I
:
10.1103/PhysRevB.22.1885
中图分类号
:
T [工业技术];
学科分类号
:
08 ;
摘要
:
引用
收藏
页码:1885 / 1891
页数:7
相关论文
共 21 条
[1]
The Formation and Devitrification of Oxides on Silicon
[J].
Ainger, F. W.
论文数:
0
引用数:
0
h-index:
0
机构:
Plessey Co Ltd, Allen Clark Res Ctr, Towcester, Northants, England
Plessey Co Ltd, Allen Clark Res Ctr, Towcester, Northants, England
Ainger, F. W.
.
JOURNAL OF MATERIALS SCIENCE,
1966,
1
(01)
:1
-13
[2]
HIGH-TEMPERATURE OXIDATION .2. MOLYBDENUM SILICIDES
[J].
BERKOWIT.JB
论文数:
0
引用数:
0
h-index:
0
BERKOWIT.JB
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1965,
112
(06)
:583
-&
[3]
CROWDER BL, 1977, RECENT NEWS
[4]
GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON
[J].
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
;
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
.
JOURNAL OF APPLIED PHYSICS,
1965,
36
(12)
:3770
-&
[5]
THE OXIDATION OF SILICON IN DRY OXYGEN, WET OXYGEN, AND STEAM
[J].
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1963,
110
(06)
:527
-533
[6]
THERMAL OXIDATION OF HEAVILY DOPED SILICON
[J].
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
;
SKLAR, M
论文数:
0
引用数:
0
h-index:
0
SKLAR, M
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1965,
112
(04)
:430
-+
[7]
RATES OF FORMATION OF THERMAL OXIDES OF SILICON
[J].
EVITTS, HC
论文数:
0
引用数:
0
h-index:
0
EVITTS, HC
;
COOPER, HW
论文数:
0
引用数:
0
h-index:
0
COOPER, HW
;
FLASCHEN, SS
论文数:
0
引用数:
0
h-index:
0
FLASCHEN, SS
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(06)
:688
-690
[8]
GAS PERMEATION STUDY AND IMPERFECTION DETECTION OF THERMALLY GROWN AND DEPOSITED THIN SILICON DIOXIDE FILMS
[J].
ING, SW
论文数:
0
引用数:
0
h-index:
0
ING, SW
;
MORRISON, RE
论文数:
0
引用数:
0
h-index:
0
MORRISON, RE
;
SANDOR, JE
论文数:
0
引用数:
0
h-index:
0
SANDOR, JE
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1962,
109
(03)
:221
-226
[9]
Silicon Oxidation Studies: The Role of H2O
[J].
Irene, E. A.
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
IBM Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
Irene, E. A.
;
Ghez, R.
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
IBM Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
Ghez, R.
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1977,
124
(11)
:1757
-1761
[10]
SILICON OXIDATION STUDIES - ANALYSIS OF SIO2 FILM GROWTH DATA
[J].
IRENE, EA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IRENE, EA
;
VANDERMEULEN, YJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
VANDERMEULEN, YJ
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1976,
123
(09)
:1380
-1384
←
1
2
3
→
共 21 条
[1]
The Formation and Devitrification of Oxides on Silicon
[J].
Ainger, F. W.
论文数:
0
引用数:
0
h-index:
0
机构:
Plessey Co Ltd, Allen Clark Res Ctr, Towcester, Northants, England
Plessey Co Ltd, Allen Clark Res Ctr, Towcester, Northants, England
Ainger, F. W.
.
JOURNAL OF MATERIALS SCIENCE,
1966,
1
(01)
:1
-13
[2]
HIGH-TEMPERATURE OXIDATION .2. MOLYBDENUM SILICIDES
[J].
BERKOWIT.JB
论文数:
0
引用数:
0
h-index:
0
BERKOWIT.JB
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1965,
112
(06)
:583
-&
[3]
CROWDER BL, 1977, RECENT NEWS
[4]
GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON
[J].
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
;
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
.
JOURNAL OF APPLIED PHYSICS,
1965,
36
(12)
:3770
-&
[5]
THE OXIDATION OF SILICON IN DRY OXYGEN, WET OXYGEN, AND STEAM
[J].
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1963,
110
(06)
:527
-533
[6]
THERMAL OXIDATION OF HEAVILY DOPED SILICON
[J].
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
;
SKLAR, M
论文数:
0
引用数:
0
h-index:
0
SKLAR, M
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1965,
112
(04)
:430
-+
[7]
RATES OF FORMATION OF THERMAL OXIDES OF SILICON
[J].
EVITTS, HC
论文数:
0
引用数:
0
h-index:
0
EVITTS, HC
;
COOPER, HW
论文数:
0
引用数:
0
h-index:
0
COOPER, HW
;
FLASCHEN, SS
论文数:
0
引用数:
0
h-index:
0
FLASCHEN, SS
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(06)
:688
-690
[8]
GAS PERMEATION STUDY AND IMPERFECTION DETECTION OF THERMALLY GROWN AND DEPOSITED THIN SILICON DIOXIDE FILMS
[J].
ING, SW
论文数:
0
引用数:
0
h-index:
0
ING, SW
;
MORRISON, RE
论文数:
0
引用数:
0
h-index:
0
MORRISON, RE
;
SANDOR, JE
论文数:
0
引用数:
0
h-index:
0
SANDOR, JE
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1962,
109
(03)
:221
-226
[9]
Silicon Oxidation Studies: The Role of H2O
[J].
Irene, E. A.
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
IBM Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
Irene, E. A.
;
Ghez, R.
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
IBM Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
Ghez, R.
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1977,
124
(11)
:1757
-1761
[10]
SILICON OXIDATION STUDIES - ANALYSIS OF SIO2 FILM GROWTH DATA
[J].
IRENE, EA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IRENE, EA
;
VANDERMEULEN, YJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
VANDERMEULEN, YJ
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1976,
123
(09)
:1380
-1384
←
1
2
3
→