DEFECT CREATION AND HYDROGEN EVOLUTION IN AMORPHOUS SI-H

被引：49

作者：

BIEGELSEN, DK

STREET, RA

TSAI, CC

KNIGHTS, JC

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1980年 / 35-6卷 / JAN-期

关键词：

D O I：

10.1016/0022-3093(80)90608-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：285 / 290

页数：6

共 11 条

[1]

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[2] QUANTITATIVE-ANALYSIS OF HYDROGEN IN GLOW-DISCHARGE AMORPHOUS SILICON [J].

BRODSKY, MH ;

FRISCH, MA ;

ZIEGLER, JF ;

LANFORD, WA .

APPLIED PHYSICS LETTERS, 1977, 30 (11) :561-563

[3] SIMS ANALYSIS OF DEUTERIUM DIFFUSION IN HYDROGENATED AMORPHOUS SILICON [J].

CARLSON, DE ;

MAGEE, CW .

APPLIED PHYSICS LETTERS, 1978, 33 (01) :81-83

[4]

CARLSON DE, 1979, SAN22191 DEP EN PUBL

[5]

KNIGHTS JC, 1978, PHILOS MAG B, V37, P467, DOI 10.1080/01418637808225790

[6]

KNIGHTS JC, UNPUBLISHED

[7] HYDROGEN EVOLUTION FROM PLASMA-DEPOSITED AMORPHOUS SILICON FILMS [J].

MATYSIK, KJ ;

MOGAB, CJ ;

BAGLEY, BG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02) :302-304

[8]

MCMILLAN JW, UNPUBLISHED

[9] LUMINESCENCE STUDIES OF PLASMA-DEPOSITED HYDROGENATED SILICON [J].

STREET, RA ;

KNIGHTS, JC ;

BIEGELSEN, DK .

PHYSICAL REVIEW B, 1978, 18 (04) :1880-1891

[10] EFFECT OF ANNEALING ON THE OPTICAL-PROPERTIES OF PLASMA DEPOSITED AMORPHOUS HYDROGENATED SILICON [J].

TSAI, CC ;

FRITZSCHE, H .

SOLAR ENERGY MATERIALS, 1979, 1 (1-2) :29-42

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