HIGH-SPEED PLANAR GAAS PHOTOCONDUCTORS WITH SURFACE IMPLANT LAYERS

被引：7

作者：

ANDERSON, GW

PAPANICOLAOU, NA

THOMPSON, PE

BOOS, JB

CARRUTHERS, TF

MA, DI

MACK, IAG

MODOLO, JA

KUB, FJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 04期

关键词：

D O I：

10.1063/1.99905

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：313 / 315

页数：3

共 15 条

[1]

Anderson G. W., 1987, Proceedings of the SPIE - The International Society for Optical Engineering, V789, P154, DOI 10.1117/12.940734

[2]

ANDERSON GW, IN PRESS APPL OPT, V27

[3] GAIN AND BANDWIDTH OF FAST NEAR-INFRARED PHOTODETECTORS - A COMPARISON OF DIODES, PHOTOTRANSISTORS, AND PHOTOCONDUCTIVE DEVICES [J].

BENEKING, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) :1420-1431

[4]

Borsuk G. M., 1986, Proceedings of the SPIE - The International Society for Optical Engineering, V639, P2, DOI 10.1117/12.964317

[5] PHOTODETECTORS FOR ACOUSTOOPTIC SIGNAL PROCESSORS [J].

BORSUK, GM .

PROCEEDINGS OF THE IEEE, 1981, 69 (01) :100-118

[6]

CARRUTHERS TF, 1984, PICOSECOND OPTOELECT, P339

[7] SURFACE AND INTERFACE DEPLETION CORRECTIONS TO FREE CARRIER-DENSITY DETERMINATIONS BY HALL MEASUREMENTS [J].

CHANDRA, A ;

WOOD, CEC ;

WOODARD, DW ;

EASTMAN, LF .

SOLID-STATE ELECTRONICS, 1979, 22 (07) :645-650

[8] MONOLITHIC INTEGRATED RECEIVER FRONT END CONSISTING OF A PHOTOCONDUCTIVE DETECTOR AND A GAAS SELECTIVELY DOPED HETEROSTRUCTURE TRANSISTOR [J].

CHEN, CY ;

OLSSON, NA ;

TU, CW ;

GARBINSKI, PA .

APPLIED PHYSICS LETTERS, 1985, 46 (07) :681-683

[9] PLANAR MONOLITHIC INTEGRATION OF A GAAS PHOTOCONDUCTOR AND A GAAS FIELD-EFFECT TRANSISTOR [J].

DECOSTER, D ;

VILCOT, JP ;

CONSTANT, M ;

RAMDANI, J ;

VERRIELE, H ;

VANBREMEERSCH, J .

ELECTRONICS LETTERS, 1986, 22 (04) :193-195

[10] HIGH-SPEED PHOTOCONDUCTIVE DETECTORS USING GAINAS [J].

GAMMEL, JC ;

OHNO, H ;

BALLANTYNE, JM .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :269-272

← 1 2 →