POLYSILICON-SILICON N-P JUNCTION

被引：13

作者：

LIEBLICH, Z ^{[1
]}

BARLEV, A ^{[1
]}

机构：

[1] TECHNION ISRAEL INST TECHNOL,DEPT ELECT ENGN,HAIFA,ISRAEL

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 08期

关键词：

D O I：

10.1109/T-ED.1977.18873

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1025 / 1031

页数：7

共 20 条

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[2] ENHANCEMENT OF BREAKDOWN PROPERTIES OF OVERLAY ANNULAR DIODES BY FIELD SHAPING RESISTIVE FILMS [J].

CLARK, LE ;

ZOROGLU, DS .

SOLID-STATE ELECTRONICS, 1972, 15 (06) :653-+

[3] CHEMICAL VAPOR DEPOSITED POLYCRYSTALLINE SILICON. [J].

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Sedgwick, T.O. .

1600, (119)

[4] INFLUENCE OF ASH3, PH3, AND B2H6 ON GROWTH-RATE AND RESISTIVITY OF POLYCRYSTALLINE SILICON FILMS DEPOSITED FROM A SIH4-H2 MIXTURE [J].

EVERSTEY.FC ;

PUT, BH .

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[5]

FA CH, 1970, IEEE T ELECTRON DEVI, V13, P1125

[6] SILICON GATE TECHNOLOGY [J].

FAGGIN, F ;

KLEIN, T .

SOLID-STATE ELECTRONICS, 1970, 13 (08) :1125-&

[7]

GROVE AS, 1967, PHYSICS SEMICONDUCTO

[8]

HORIUCHI S, 1973, BORON DIFFUSION SSE, V18, P529

[9] RESISTIVITY OF CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON FILMS [J].

JOSEPH, JD ;

KAMINS, TI .

SOLID-STATE ELECTRONICS, 1972, 15 (03) :355-&

[10] HALL MOBILITY IN CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON [J].

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JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4357-&

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