RUO2 BOTTOM ELECTRODES FOR FERROELECTRIC (PB,LA)(ZR,TI)O-3 THIN-FILMS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：24

作者：

TAKAGI, T ^{[1
]}

OIZUKI, I ^{[1
]}

KOBAYASHI, I ^{[1
]}

OKADA, M ^{[1
]}

机构：

[1] NIPPON SANSO CORP,TSUKUBA LAB,TSUKUBA,IBARAKI 30033,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 8A期

关键词：

RUO2 THIN FILM; CONDUCTIVE OXIDE; BOTTOM ELECTRODE; DIFFUSION BARRIER; MOCVD; FERROELECTRIC PLZT FILM;

D O I：

10.1143/JJAP.34.4104

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

RuO2 thin films were grown on various substrates by metalorganic chemical vapor deposition (XIOCVD) using RU(C11H19O2)(3). The films produced at 350 degrees C in O-2 had a tetragonal rutile structure and a resistivity of 60 mu Omega cm with excellent adhesion. From the viewpoint of integrated device applications, lanthanum-modified lead Zirconate titanate (PLZT) films were also prepared by MOCVD. The RuO2 films were found to serve as effective diffusion barriers for PLZT and MgO. Significant interdiffusion at RuO2/Si and RuO2/SiO2 interfaces occurred during the deposition of PLZT films, and annealing of RuO2 film considerably depressed the interface reactions, Ta2O5 film served as an excellent barrier against the interface reaction between RuO2 and Si. The dielectric and ferroelectric properties of PLZT thin films on the RuO2/MgO and RuO2/Ta2O5/Si substrates were superior compared to those observed with RuO2/Si and RuO2/SiO2/Si substrates.

引用

页码：4104 / 4107

页数：4

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