A STUDY FROM ELECTRICAL-CONDUCTIVITY DATA OF THE DEFECT CONCENTRATION IN AS-GROWN INDIUM THIN-FILMS VACUUM-DEPOSITED AT DIFFERENT DEPOSITION RATES

被引：2
作者：
DAS, VD
TALAWAI, AS
机构：
来源：
THIN SOLID FILMS | 1981年 / 81卷 / 01期
关键词：
D O I：
10.1016/0040-6090(81)90499-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：21 / 25
页数：5
相关论文
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    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 56 (01): : 195 - 198
  • [10] ANNEALING STUDY OF ELECTRICAL-RESISTIVITY AND DEFECT DENSITY IN SILVER FILMS
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