VAPOR-PHASE EPITAXIAL MATERIALS FOR LED APPLICATIONS

被引：84

作者：

CRAFORD, MG ^{[1
]}

GROVES, WO ^{[1
]}

机构：

[1] MONSANTO COMMERCIAL PROD CO,ST LOUIS,MO 63166

来源：

PROCEEDINGS OF THE IEEE | 1973年 / 61卷 / 07期

关键词：

D O I：

10.1109/PROC.1973.9175

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：862 / 880

页数：19

共 91 条

[11]

BURD JW, 1972, F3361571C CONTR

[12]

BURD JW, PRIVATE COMMUNICATIO

[13]

BURMEIST.RA, 1969, T METALL SOC AIME, V245, P565

[14]

BURMEISTER RA, 1969, T METALL SOC AIME, V245, P587

[15] PREPARATION OF HIGH PURITY EPITAXIAL INF [J].

CLARKE, RC ;

JOYCE, BD ;

WILGOSS, WHE .

SOLID STATE COMMUNICATIONS, 1970, 8 (14) :1125-&

[16]

Craford M. G., 1973, Journal of Electronic Materials, V2, P137, DOI 10.1007/BF02658108

[17] RADIATIVE RECOMBINATION MECHANISMS IN GAASP DIODES WITH AND WITHOUT NITROGEN DOPING [J].

CRAFORD, MG ;

SHAW, RW ;

HERZOG, AH ;

GROVES, WO .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) :4075-&

[18] ELECTROLUMINESCENCE AND ELECTRICAL PROPERTIES OF HIGH-PURITY VAPOR-GROWN GAP [J].

CRAFORD, MG ;

GROVES, WO ;

HERZOG, AH ;

HILL, DE .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (07) :2751-+

[19]

CRAFORD MG, 1973, PROGR SOLID STATE CH, V8

[20] EPITAXIAL GAAS FILMS DEPOSITED BY VACUUM EVAPORATION [J].

DAVEY, JE ;

PANKEY, T .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) :1941-&

← 1 2 3 4 5 6 7 8 9 10 →