VAPOR-PHASE EPITAXIAL MATERIALS FOR LED APPLICATIONS

被引：84

作者：

CRAFORD, MG ^{[1
]}

GROVES, WO ^{[1
]}

机构：

[1] MONSANTO COMMERCIAL PROD CO,ST LOUIS,MO 63166

来源：

PROCEEDINGS OF THE IEEE | 1973年 / 61卷 / 07期

关键词：

D O I：

10.1109/PROC.1973.9175

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：862 / 880

页数：19

共 91 条

[1] DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX [J].

ABRAHAMS, MS ;

WEISBERG, LR ;

BUIOCCHI, CJ ;

BLANC, J .

JOURNAL OF MATERIALS SCIENCE, 1969, 4 (03) :223-&

[2] VISIBILITY OF RED AND GREEN ELECTROLUMINESCENT DIODES FOR COLOR-ANOMALOUS OBSERVERS [J].

ALLYN, MR ;

BACHRACH, RZ ;

DIXON, RW .

APPLIED OPTICS, 1972, 11 (11) :2450-&

[3]

ARCHER RJ, 1972, J ELECTRON MATER, V1, P128

[4] MEASUREMENT OF EXTRINSIC ROOM-TEMPERATURE MINORITY CARRIER LIFETIME IN GAP [J].

BACHRACH, RZ ;

LORIMOR, OG .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) :500-&

[5]

BECKE H, 1964, T MET SOC AIME, V230, P308

[6] SPECTROSCOPIC OBSERVATION OF A VACANCY COMPLEX IN GAP [J].

BHARGAVA, RN ;

KURTZ, SK ;

VINK, AT ;

PETERS, RC .

PHYSICAL REVIEW LETTERS, 1971, 27 (04) :183-+

[7] MG-O COMPLEXES IN GAP - YELLOW DIODE [J].

BHARGAVA, RN ;

BRONNES, RL ;

KURTZ, SK ;

LUPATKIN, WL ;

MICHEL, C .

APPLIED PHYSICS LETTERS, 1972, 20 (06) :227-&

[8]

BHARGAVA RN, 1972, PHILLIPS TECH REV, V32, P261

[9]

BLAKESLEE AE, 1972, 2 NAT C CRYST GROWTH

[10]

BURD JW, 1969, T METALL SOC AIME, V245, P571

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