NONRADIATIVE RECOMBINATION AND SATURATION OF TRAPS IN MULTIPLE INTRINSIC QUANTUM-WELLS

被引:6
作者
DING, YJ
VELIADIS, JVD
KHURGIN, JB
机构
[1] BOWLING GREEN STATE UNIV,CTR PHOTOCHEM SCI,BOWLING GREEN,OH 43403
[2] JOHNS HOPKINS UNIV,DEPT ELECT & COMP ENGN,BALTIMORE,MD 21218
关键词
D O I
10.1063/1.356362
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have investigated the dependence of the continuous-wave photoluminescence on the laser intensity, which is affected by the trap saturation and the dominant nonradiative recombination in multiple intrinsic quantum wells. If the laser intensity is relatively low, the photoluminescence is proportional to the 1.5 power of the laser intensity. As the laser intensity increases, however, and above a critical intensity, the photoluminescence increases at a rate that is higher than square-law and finally approaches this dependence. This is the result of trap saturation. In order to examine the trap saturation in a more sensitive scale, we have calculated the dependence of the effective nonradiative decay time on the laser intensity. In addition, the laser-intensity dependences of the trapping efficiency and of the ratio of the electron and hole nonradiative decay times, have been determined for different ratios of the trapping and nonradiative recombination rates. The laser-intensity dependences of the electron and hole nonradiative decay times have also been determined.
引用
收藏
页码:1727 / 1732
页数:6
相关论文
共 17 条
[1]   ROOM-TEMPERATURE EXCITONIC NONLINEAR-OPTICAL EFFECTS IN SEMICONDUCTOR QUANTUM-WELL STRUCTURES [J].
CHEMLA, DS ;
MILLER, DAB .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1985, 2 (07) :1155-1173
[2]   CARRIER RECOMBINATION RATES IN STRAINED-LAYER INGAAS-GAAS QUANTUM-WELLS [J].
CHEN, YC ;
WANG, P ;
COLEMAN, JJ ;
BOUR, DP ;
LEE, KK ;
WATERS, RG .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1451-1454
[3]   FREQUENCY AND DENSITY DEPENDENT RADIATIVE RECOMBINATION PROCESSES IN III-V SEMICONDUCTOR QUANTUM-WELLS AND SUPERLATTICES [J].
CINGOLANI, R ;
PLOOG, K .
ADVANCES IN PHYSICS, 1991, 40 (05) :535-623
[4]   CHARACTERIZATION OF RECOMBINATION PROCESSES IN MULTIPLE NARROW ASYMMETRIC COUPLED QUANTUM-WELLS BASED ON THE DEPENDENCE OF PHOTOLUMINESCENCE ON LASER INTENSITY [J].
DING, YJ ;
GUO, CL ;
KHURGIN, JB ;
LAW, KK ;
MERZ, JL .
APPLIED PHYSICS LETTERS, 1992, 60 (17) :2051-2053
[5]   CONTINUOUS-WAVE PHOTOLUMINESCENCE EXCITATION-SPECTRA OF MULTIPLE NARROW-STEPPED QUANTUM-WELLS - EVIDENCE FOR SATURATION OF INTERFACE TRAPS [J].
DING, YJ ;
GUO, CL ;
LI, S ;
KHURGIN, JB ;
LAW, KK ;
MERZ, JL .
APPLIED PHYSICS LETTERS, 1992, 60 (02) :154-156
[6]   DEMONSTRATION OF STRONG SATURATION OF TRAPS IN MULTIPLE, NARROW, SLIGHTLY ASYMMETRIC COUPLED QUANTUM-WELLS [J].
DING, YJ ;
GUO, CL ;
KHURGIN, JB ;
LAW, KK ;
MERZ, JL .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1993, 10 (01) :108-111
[7]   RECOMBINATION DYNAMICS IN GAAS/ALXGA1-XAS QUANTUM-WELL STRUCTURES [J].
FOUQUET, JE ;
BURNHAM, RD .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1799-1810
[8]   TEMPERATURE-DEPENDENCE OF THE RADIATIVE AND NONRADIATIVE RECOMBINATION TIME IN GAAS/ALXGA1-XAS QUANTUM-WELL STRUCTURES [J].
GURIOLI, M ;
VINATTIERI, A ;
COLOCCI, M ;
DEPARIS, C ;
MASSIES, J ;
NEU, G ;
BOSACCHI, A ;
FRANCHI, S .
PHYSICAL REVIEW B, 1991, 44 (07) :3115-3124
[9]   MINORITY-CARRIER LIFETIMES IN UNDOPED ALGAAS GAAS MULTIPLE QUANTUM WELLS [J].
HARIZ, A ;
DAPKUS, PD ;
LEE, HC ;
MENU, EP ;
DENBAARS, SP .
APPLIED PHYSICS LETTERS, 1989, 54 (07) :635-637
[10]   FEMTOSECOND DYNAMICS OF RESONANTLY EXCITED EXCITONS IN ROOM-TEMPERATURE GAAS QUANTUM WELLS [J].
KNOX, WH ;
FORK, RL ;
DOWNER, MC ;
MILLER, DAB ;
CHEMLA, DS ;
SHANK, CV ;
GOSSARD, AC ;
WIEGMANN, W .
PHYSICAL REVIEW LETTERS, 1985, 54 (12) :1306-1309