NONRADIATIVE RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS AT FINITE TEMPERATURES

被引：0
|
作者：
DICKMANN, SM
机构：
[1] State Enterprise for Research and Production KVANT
来源：
PHYSICS LETTERS A | 1993年 / 177卷 / 4-5期
关键词：
D O I：
10.1016/0375-9601(93)90018-U
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The basic exponential factor for the recombination rate is calculated exactly within the scope of the multiple-level recombination model. The result contains essentially a nonlinear temperature dependence for the exponent power and is valid at temperatures T of the order of 100 K or higher.
引用
收藏
页码：371 / 374
页数：4
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