PIEZOELECTRIC-INDUCED CURRENT ASYMMETRY IN [111] INGAAS/INALAS RESONANT-TUNNELING DIODES FOR MICROWAVE MIXING

被引：13

作者：

HERNANDEZ, JM

IZPURA, I

CALLEJA, E

MUNOZ, E

机构：

[1] Departamento de Ingeniería Electrónica, E.T.S.I. Telecomunicación, Universidad Politénica, Ciudad Universitaria

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 06期

关键词：

D O I：

10.1063/1.110777

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter predicts a strong nonlinear current density versus voltage (J-V) dependence in InAlAs/InGaAs/InAlAs double barrier resonant tunneling diodes (DBRTDs) with a strained well, grown on [111] InP. The piezoelectric field generates accumulation and depletion regions in both contact layers at zero bias, producing a high asymmetric J-V characteristic while keeping a low device series resistance. Very high cutoff frequency devices, suitable for low-level microwave mixing applications, are then proposed.

引用

页码：773 / 775

页数：3

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