ELECTRONIC AND ATOMIC-STRUCTURE OF SI(111) AL, AG, AND NI METAL OVERLAYER INDUCED SURFACE RECONSTRUCTIONS

被引：43

作者：

HANSSON, GV ^{[1
]}

BACHRACH, RZ ^{[1
]}

BAUER, RS ^{[1
]}

CHIARADIA, P ^{[1
]}

机构：

[1] STANFORD SYNCHROTRON RADIAT LAB,STANFORD,CA 94305

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 18卷 / 02期

关键词：

D O I：

10.1116/1.570810

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：550 / 555

页数：6

共 18 条

[1]

BEAN JC, 1980, ELECTRONIC MATERIALS

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PHYSICAL REVIEW LETTERS, 1980, 44 (12) :799-802

[3] NI ON SI(111) - REACTIVITY AND INTERFACE STRUCTURE [J].

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[4] INTERFACIAL ORDER IN EPITAXIAL NISI2 [J].

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[5]

EASTMAN DE, 1980, J VAC SCI TECHNOL, V17, P492, DOI 10.1116/1.570492

[6]

EASTMAN DE, 1978, 43 I PHYS C SER, P1059

[7] ELECTRONIC-STRUCTURE OF SI(111) SURFACES [J].

HANSSON, GV ;

BACHRACH, RZ ;

BAUER, RS ;

CHADI, DJ ;

GOPEL, W .

SURFACE SCIENCE, 1980, 99 (01) :13-27

[8] CORRECTION [J].

HANSSON, GV .

PHYSICAL REVIEW B, 1979, 19 (06) :3329-3329

[9]

HANSSON GV, UNPUBLISHED

[10]

KOBAYASHI KLI, SR8008 DESY REP

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