DETERMINATION OF INTERFACE-STATE PARAMETERS IN A MOS CAPACITOR BY DLTS

被引：48

作者：

TREDWELL, TJ ^{[1
]}

VISWANATHAN, CR ^{[1
]}

机构：

[1] UNIV CALIF LOS ANGELES,DEPT ELECT SCI & ENGN,LOS ANGELES,CA 90024

来源：

SOLID-STATE ELECTRONICS | 1980年 / 23卷 / 11期

关键词：

D O I：

10.1016/0038-1101(80)90029-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1171 / 1178

页数：8

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[9] TRANSIENT CAPACITANCE MEASUREMENTS OF INTERFACE STATES ON THE INTENTIONALLY CONTAMINATED SI-SIO2 INTERFACE [J].

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[10] DETERMINATION OF INTERFACE AND BULK-TRAP STATES OF IGFETS USING DEEP-LEVEL TRANSIENT SPECTROSCOPY [J].

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