ANOMALOUS HALL-EFFECT AND THE ANOMALOUS INFRARED-ABSORPTION IN N-TYPE BULK HG0.8CD0.2TE

被引：6

作者：

TIAN, JG

ZHANG, CP

ZHANG, GY

机构：

[1] Department of Physics, Nankai University

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 20期

关键词：

D O I：

10.1063/1.105912

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The anomalous Hall effects and the anomalous infrared absorption dependence on temperature have been observed in n-type bulk Hg0.8Cd0.2Te in the temperature range between 5 and 300 K. The existence of p-type inclusions in an n-type matrix is considered as the cause of the anomalies. IR spectrum measurement is suggested to be employed to investigate the anomalous effects in bulk HgCdTe crystal.

引用

收藏

页码：2591 / 2593

页数：3

相关论文

共 12 条

[1] THE TEMPERATURE-DEPENDENCE OF THE ANOMALOUS HALL-EFFECTS IN P-TYPE HGCDTE [J].

CHEN, MC .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (04) :1571-1577

[2] INVERTED SURFACE EFFECT OF P-TYPE HGCDTE [J].

CHEN, MC .

APPLIED PHYSICS LETTERS, 1987, 51 (22) :1836-1838

[3] INHOMOGENEITY MODEL FOR ANOMALOUS HALL-EFFECTS IN N-TYPE HG0.8CD0.2 TE LIQUID-PHASE-EPITAXY FILMS [J].

CHEN, MC ;

PARKER, SG ;

WEIRAUCH, DF .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (08) :3150-3153

[4] ANOMALOUS ELECTRICAL PROPERTIES OF PARA-TYPE INDIUM ARSENIDE [J].

DIXON, JR .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (09) :1412-1416

[5] ELECTRICAL TRANSPORT PROPERTIES OF SEMICONDUCTING CDXHG1-XTE ALLOYS [J].

ELLIOTT, CT ;

SPAIN, IL .

SOLID STATE COMMUNICATIONS, 1970, 8 (24) :2063-&

[6] DETERMINATION OF BAND-GAP PARAMETERS OF HG1-XCDXTE BASED ON HIGH-TEMPERATURE CARRIER CONCENTRATION [J].

FINKMAN, E .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) :1883-1886

[7] INFRARED OPTICAL-ABSORPTION OF HG1-XCDXTE [J].

FINKMAN, E ;

NEMIROVSKY, Y .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) :4356-4361

[8] HALL-EFFECT AND RESISTIVITY IN LIQUID-PHASE-EPITAXIAL LAYERS OF HGCDTE [J].

LOU, LF ;

FRYE, WH .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (08) :2253-2267

[9] OPTICAL-ABSORPTION BELOW THE ABSORPTION-EDGE IN HG1-XCDXTE [J].

MROCZKOWSKI, JA ;

NELSON, DA .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) :2041-2051

[10] THEORY OF AN EXPERIMENT FOR MEASURING THE MOBILITY AND DENSITY OF CARRIERS IN THE SPACE-CHARGE REGION OF A SEMICONDUCTOR SURFACE [J].

PETRITZ, RL .

PHYSICAL REVIEW, 1958, 110 (06) :1254-1262