2-PHOTON ABSORPTION IN GE - BAND EFFECTS

被引：13

作者：

BRYANT, GW

机构：

来源：

PHYSICAL REVIEW B | 1980年 / 22卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.22.1992

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1992 / 1999

页数：8

共 22 条

[1]

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[4]

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[5]

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[6] 2-PHOTON ABSORPTION IN INDIUM-ANTIMONIDE AT 10.6 MUM [J].

DOVIAK, JM ;

GIBSON, AF ;

KIMMITT, MF ;

WALKER, AC .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (03) :593-600

[7] FOURIER EXPANSION FOR ELECTRONIC ENERGY BANDS IN SILICON AND GERMANIUM [J].

DRESSELHAUS, G ;

DRESSELHAUS, MS .

PHYSICAL REVIEW, 1967, 160 (03) :649-+

[8]

Edmonds AR., 1957, ANGULAR MOMENTUM QUA, V3rd edn

[9] VALENCE BAND STRUCTURE OF GERMANIUM [J].

FAWCETT, W .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1965, 85 (547P) :931-&

[10] 2-PHOTON ABSORPTION IN INDIUM-ANTIMONIDE AND GERMANIUM [J].

GIBSON, AF ;

HATCH, CB ;

MAGGS, PND ;

TILLEY, DR ;

WALKER, AC .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (17) :3259-3275

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