RBS AND ERD ANALYSIS OF SEMICONDUCTOR-DEVICE MATERIALS

被引:10
作者
KUIPER, AET
机构
[1] Philips Research Laboratories, Eindhoven
关键词
D O I
10.1002/sia.740160110
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The number of applications of Rutherford back‐scattering spectrometry (RBS) in the field of integrated circuit (IC)‐related materials research is ever‐increasing. Both qualitative and quantitative information about thin‐film material can be derived from a single RBS spectrum, as is demonstrated from various example that are typical for semiconductor research. Such examples include kinetic studies of thin‐film reactions. The RBS facility constructed at Philips Research Laboratories in Eindhoven for in situ investigations is described. Hydrogen, which in principle cannot be detected in RBS, can be measured with the related technique of elastic recoil detection (ERD). ERD can be performed readily in conventional RBS equipment, which adds to its attractiveness as a complementary technique. Examples are discussed to show how RBS and ERD combine in characterizing thin films. Copyright © 1990 John Wiley & Sons Ltd.
引用
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页码:29 / 35
页数:7
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