THIN ORGANIC FILMS FOR ELECTRONICS APPLICATIONS

The possibility of preparing useful electronic devices incorporating thin organic films between a semiconductor and a metal electrode has been demonstrated. Organic thin films from 200 to 300 nm in thickness have been deposited on n- and p-type silicon wafers using a plasma-ion beam technique. The current-voltage I-V characteristics of the devices display stable and reproducible rectifying properties and exhibit similar current-voltage parameters to those of pn junction diodes but with electrical breakdown voltages between 100 and 200 V. A combination of thermionic emission and space-charge-limited emission is thought to be the predominant conduction process in the forward bias condition. However, thermionic carrier generation and recombination within the silicon substrate is the operative process under reverse bias conditions. © 1990.