THE EFFECT OF HEAVY-METAL CONTAMINATION IN SIMOX ON RADIATION HARDNESS OF MOS-TRANSISTORS

被引：4
|
作者：
IPRI, AC
JASTRZEBSKI, L
PETERS, D
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 12期
关键词：
D O I：
10.1109/55.43143
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：571 / 573
页数：3
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