NUMERICAL-ANALYSIS OF GAAS EPITAXIAL-LAYER SCHOTTKY DIODES

被引：7

作者：

ADAMS, JG ^{[1
]}

JELENSKI, A ^{[1
]}

NAVON, DH ^{[1
]}

TANG, TW ^{[1
]}

机构：

[1] UNIV MASSACHUSETTS,SCH ENGN,CTR APPL TECHNOL,AMHERST,MA 01003

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 09期

关键词：

D O I：

10.1109/T-ED.1987.23182

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1963 / 1970

页数：8

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