ZIRCONIUM DIOXIDE THIN-FILMS DEPOSITED BY ALE USING ZIRCONIUM TETRACHLORIDE AS PRECURSOR

被引：154

作者：

RITALA, M

LESKELA, M

机构：

[1] Department of Chemistry, University of Helsinki, SF-00014 Helsinki

来源：

APPLIED SURFACE SCIENCE | 1994年 / 75卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(94)90180-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

ZrO2 thin films were grown by the atomic layer epitaxy (ALE) technique using ZrCl4 and water as reactants. At 500 degrees C amorphous films with good thickness uniformities were deposited onto soda lime glass substrates. However, rather long pulse and purge times were needed to realize the self-controlled growth. Films were characterized by means of spectrophotometry, RBS, NRA, SEM and AFM.

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页码：333 / 340

页数：8

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