Nanoelectronics: the Hall Effect and Measurement of Electrochemical Potentials by "Bottom-Up" Approach

被引：0
|
作者：
Kruglyak, Yu. A. [1 ]
Kondratenko, P. A. [2 ]
Lopatkin, Yu. M. [3 ]
机构：
[1] Odessa State Environm Univ, 15 Lviv Str, UA-65016 Odessa, Ukraine
[2] Natl Aviat Univ, UA-03058 Kiev, Ukraine
[3] Sumy State Univ, UA-40007 Sumy, Ukraine
来源：
JOURNAL OF NANO- AND ELECTRONIC PHYSICS | 2015年 / 7卷 / 02期
关键词：
Nanophysics; Nanoelectronics; Molecular electronics; Bottom-up; Hall effect; Quantum Hall effect; QHE; Chemical potential; Electrochemical potential; Landau levels; Edge states; Graphene; NEGF;
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Classical and quantum Hall effects, measurement of electrochemical potentials, the Landauer formulas and Buttiker formula, measurement of Hall potential, an account of magnetic field in the NEGF method, quantum Hall effect, Landau method, and edge states in graphene are discussed in the frame of the "bottom-up" approach of modern nanoelectronics.
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页数：15
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