Nanoelectronics: the Hall Effect and Measurement of Electrochemical Potentials by "Bottom-Up" Approach

被引：0
作者：
Kruglyak, Yu. A. [1 ]
Kondratenko, P. A. [2 ]
Lopatkin, Yu. M. [3 ]
机构：
[1] Odessa State Environm Univ, 15 Lviv Str, UA-65016 Odessa, Ukraine
[2] Natl Aviat Univ, UA-03058 Kiev, Ukraine
[3] Sumy State Univ, UA-40007 Sumy, Ukraine
来源：
JOURNAL OF NANO- AND ELECTRONIC PHYSICS | 2015年 / 7卷 / 02期
关键词：
Nanophysics; Nanoelectronics; Molecular electronics; Bottom-up; Hall effect; Quantum Hall effect; QHE; Chemical potential; Electrochemical potential; Landau levels; Edge states; Graphene; NEGF;
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Classical and quantum Hall effects, measurement of electrochemical potentials, the Landauer formulas and Buttiker formula, measurement of Hall potential, an account of magnetic field in the NEGF method, quantum Hall effect, Landau method, and edge states in graphene are discussed in the frame of the "bottom-up" approach of modern nanoelectronics.
引用
收藏
页数：15
相关论文
共 42 条
  • [1] Spin-filtered edge states and quantum hall effect in graphene
    Abanin, DA
    Lee, PA
    Levitov, LS
    [J]. PHYSICAL REVIEW LETTERS, 2006, 96 (17)
  • [2] ASHKROFT N, 1979, FIZIKA TVERDOGO TELA, V2
  • [3] ASHKROFT N, 1979, FIZIKA TVERDOGO TELA, V1
  • [4] Electronic confinement and coherence in patterned epitaxial graphene
    Berger, Claire
    Song, Zhimin
    Li, Xuebin
    Wu, Xiaosong
    Brown, Nate
    Naud, Cecile
    Mayou, Didier
    Li, Tianbo
    Hass, Joanna
    Marchenkov, Atexei N.
    Conrad, Edward H.
    First, Phillip N.
    de Heer, Wait A.
    [J]. SCIENCE, 2006, 312 (5777) : 1191 - 1196
  • [5] Edge states and the quantized Hall effect in graphene
    Brey, L
    Fertig, HA
    [J]. PHYSICAL REVIEW B, 2006, 73 (19):
  • [6] BASIC CONCEPTS IN QUANTUM AND STOCHASTIC TRANSPORT - PREFACE
    BUTTIKER, M
    [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1988, 32 (01) : 3 - 3
  • [7] 4-TERMINAL PHASE-COHERENT CONDUCTANCE
    BUTTIKER, M
    [J]. PHYSICAL REVIEW LETTERS, 1986, 57 (14) : 1761 - 1764
  • [8] Current distributions in quantum Hall effect devices
    Cage, ME
    [J]. JOURNAL OF RESEARCH OF THE NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY, 1997, 102 (06): : 677 - 691
  • [9] Datta S., 2012, LESSONS NANOELECTRON
  • [10] CURRENT-INDUCED SPIN ORIENTATION OF ELECTRONS IN SEMICONDUCTORS
    DYAKONOV, MI
    PEREL, VI
    [J]. PHYSICS LETTERS A, 1971, A 35 (06) : 459 - &
12345