INDIRECT-TO-DIRECT TRANSITION OF STIMULATED-EMISSION IN ALXGA1-XAS

被引：6

作者：

RINKER, M ^{[1
]}

KALT, H ^{[1
]}

LU, YC ^{[1
]}

BAUSER, E ^{[1
]}

GANSER, P ^{[1
]}

KOHLER, K ^{[1
]}

机构：

[1] FRAUNHOFER INST APPL SOLID STATE PHYS,W-7800 FREIBURG,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 09期

关键词：

D O I：

10.1063/1.106357

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The sensitivity of the threshold for stimulated emission on temperature is typically described by the T0 parameter of a heuristic exponential law. This T0 parameter has a value of about 80 K in Al(x)Ga(1-x)As heterostructures with a direct fundamental gap, while it is rather large (300 K) in indirect-gap Al(x)Ga(1-x)As. Samples with an AlAs mole fraction (here x = 0.43 and 0.44) close to the direct-to-indirect crossover change the nature of their fundamental gap, and thus the dominant channel for stimulated emission, from indirect to direct with rising lattice temperature. This temperature-induced change in bandstructure is reflected in a drastic change of the T0 parameter. As a direct consequence of the differential T0 values, indirect-gap Al0.46Ga0.54As has a room-temperature threshold comparable to the standard laser material Al0.33Ga0.77As.

引用

页码：1102 / 1104

页数：3

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