ARSENIC AND CADMIUM IMPLANTATIONS INTO N-TYPE GALLIUM ARSENIDE

被引：23
作者：
ITOH, T
KUSHIRO, Y
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 12期
关键词：
D O I：
10.1063/1.1659901
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：5120 / +
页数：1
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共 21 条
[1]  
EMELYANENKO OV, 1964, SOV PHYS-SOLID STATE, V3, P144
[2]   EFFICIENT DOPING OF GAAS BY SE+ ION IMPLANTATION [J].
FOYT, AG ;
DONNELLY, JP ;
LINDLEY, WT .
APPLIED PHYSICS LETTERS, 1969, 14 (12) :372-&
[3]   OHMIC CONTACTS TO SOLUTION-GROWN GALLIUM ARSENIDE [J].
HARRIS, JS ;
NANNICHI, Y ;
PEARSON, GL .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) :4575-&
[4]   ELECTRICAL PROPERTIES OF ZINC AND CADMIUM ION IMPLANTED LAYERS IN GALLIUM ARSENIDE [J].
HUNSPERG.RG ;
MARSH, OJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (04) :488-&
[5]   ANNEAL BEHAVIOR OF DEFECTS IN ION-IMPLANTED GAAS DIODES [J].
HUNSPERGER, RG ;
MARSH, OJ .
METALLURGICAL TRANSACTIONS, 1970, 1 (03) :603-+
[6]   PRESENCE OF DEEP LEVELS IN ION IMPLANTED JUNCTIONS [J].
HUNSPERGER, RG ;
MARSH, OJ ;
MEAD, CA .
APPLIED PHYSICS LETTERS, 1968, 13 (09) :295-+
[7]   LUMINESCENCE IN SILICON-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY [J].
KRESSEL, H ;
DUNSE, JU ;
NELSON, H ;
HAWRYLO, FZ .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) :2006-&
[8]   AVALANCHE BREAKDOWN VOLTAGE OF GAAS P+-N-N+ DIODE STRUCTURES [J].
KUNO, HJ ;
COLLARD, JR ;
GOBAT, AR .
APPLIED PHYSICS LETTERS, 1969, 14 (11) :343-&
[9]  
Lindhard J., 1963, VIDENSK SELSK MAT FY, V33, P1, DOI DOI 10.1002/ADMA.200904153
[10]  
MADELUNG O, 1964, PHYSICS 3 5 COMPOUND, P224
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