LONG-CHANNEL SILICON-ON-INSULATOR MOSFET THEORY

被引：39
作者：
ORTIZCONDE, A [1 ]
HERRERA, R [1 ]
SCHMIDT, PE [1 ]
SANCHEZ, FJG [1 ]
ANDRIAN, J [1 ]
机构：
[1] FLORIDA INT UNIV,DEPT ELECT & COMP ENGN,MIAMI,FL 33199
来源：
SOLID-STATE ELECTRONICS | 1992年 / 35卷 / 09期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1016/0038-1101(92)90164-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Based on the procedure of Pierret and Shields [1, Solid-St. Electron. 26, 143, 1983] for the long-channel bulk MOSFET, a new single-integral expression is obtained to describe the current-voltage characteristics for the silicon-on-insulator (SOI) MOSFET. This expression is valid for: any degree of inversion, all back-gate bias conditions and any semiconductor film thickness. Our single-integral expression, applied to a given back-gate bias condition and using the appropriate approximations, can be simplified to the results of the previous models.
引用
收藏
页码：1291 / 1298
页数：8
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