ELECTRONIC-PROPERTIES OF BISTABLE DEFECTS

被引：0

作者：

SIRATSKII, VM

SHAKHOVTSOV, VI

SHINDICH, VL

SHPINAR, LI

YASKOVETS, II

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1990年 / 24卷 / 10期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

An analysis is made of the influence of bistable defects on statistical and recombination properties of carriers in semiconductors. It is shown that both configurations of bistable defects must be included if a correct description is desired of the temperature dependences of the carrier densities and of the minority-carrier lifetime.

引用

页码：1117 / 1120

页数：4