MOLECULAR-BEAM EPITAXY OF INDIUM-DOPED ZNSE

Molecular beam epitaxy of In-doped ZnSe has been studied with special emphasis placed on the dependence of the crystallinity and the surface morphology on the substrate temperature (Ts), the arrival rate ratio of Se and Zn ( JSe JZn), and growth rate (G). The best crystallinity and the smoothest surface morphology is realized at tlie growth conditions: Ts = 350 375°C, JSe JZn = 0.8-3, and G ≲1.5 A ̊/sec. The influence of the incorporation of In into ZnSe on photoluminescence was investigated. Indium-doped ZnSe exhibits a blue emission band and a yellow-green emission band, whereas undoped ZnSe exhibits only blue emission. © 1979.