LIGHT-ACTIVATED STORAGE DEVICE (LASD)

被引：5

作者：

DIMARIA, DJ

DEKEERSMAECKER, RF

YOUNG, DR

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 09期

关键词：

D O I：

10.1063/1.325553

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4655 / 4659

页数：5

共 14 条

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[6] CAPTURE OF ELECTRONS INTO NA+-RELATED TRAPPING SITES IN SIO2 LAYER OF MOS STRUCTURES AT 77 DEGREESK [J].

DIMARIA, DJ ;

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JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2740-2743

[7] CAPTURE AND EMISSION OF ELECTRONS AT 2.4-EV-DEEP TRAP LEVEL IN SIO2-FILMS [J].

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[8]

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[9] CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES [J].

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[10]

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