FORWARD CHARACTERISTIC OF SILICON POWER RECTIFIERS AT HIGH CURRENT DENSITIES

The Hall theory of the pin-rectifier is extended by considering the diffusion currents in the heavily doped regions, and a general solution with low-level injection in the exterior p- and n-regions and with high-level injection in the middle region is derived. At small current densities, this general solution passes into the Hall solution: for high current densities an approximate quadratic I-V dependence is found. The dependence of the forward characteristic within this range upon the properties of the heavily doped regions and of the middle region is discussed in detail. © 1968.