SEMICONDUCTOR MICROWAVE GENERATORS

[31] THEORY OF GUNN EFFECT [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (12) : 1736 - &

[32] PRAGER HJ, 1967, IEEE T ELECTRON DEV, VED14, P632

[33] A PROPOSED HIGH-FREQUENCY, NEGATIVE-RESISTANCE DIODE [J]. BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (02): : 401 - 446

[34] REES HD, IN PRESS

[35] POSSIBILITY OF NEGATIVE RESISTANCE EFFECTS IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (500): : 293 - &

[36] SPECIFIC NEGATIVE RESISTANCE IN SOLIDS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 82 (530): : 954 - &

[37] MEASUREMENT OF VELOCITY-FIELD CHARACTERISTIC OF GALLIUM ARSENIDE [J]. APPLIED PHYSICS LETTERS, 1967, 10 (02) : 40 - &

[38] SANDBANK CP, 1965, P INT C FERRIMAGNETI, P66

[39] THIM HW, 1966, ELECTRON LETT, V2, P403

[40] WARNER FL, 1967, AUG P CORN C HIGH FR

[31] THEORY OF GUNN EFFECT [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (12) : 1736 - &

[32] PRAGER HJ, 1967, IEEE T ELECTRON DEV, VED14, P632

[33] A PROPOSED HIGH-FREQUENCY, NEGATIVE-RESISTANCE DIODE [J]. BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (02): : 401 - 446

[34] REES HD, IN PRESS

[35] POSSIBILITY OF NEGATIVE RESISTANCE EFFECTS IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (500): : 293 - &

[36] SPECIFIC NEGATIVE RESISTANCE IN SOLIDS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 82 (530): : 954 - &

[37] MEASUREMENT OF VELOCITY-FIELD CHARACTERISTIC OF GALLIUM ARSENIDE [J]. APPLIED PHYSICS LETTERS, 1967, 10 (02) : 40 - &

[38] SANDBANK CP, 1965, P INT C FERRIMAGNETI, P66

[39] THIM HW, 1966, ELECTRON LETT, V2, P403

[40] WARNER FL, 1967, AUG P CORN C HIGH FR