SEMICONDUCTOR MICROWAVE GENERATORS

[1] DETERMINATION OF NEGATIVE DIFFERENTIAL MOBILITY OF N-TYPE GALLIUM ARSENIDE USING 8MM-MICROWAVES [J]. PHYSICS LETTERS A, 1967, A 24 (04) : 200 - &

[2] BOARDMAN AL, IN PRESS

[3] BOTT IB, 1967, 1966 P INT S GAAS RE, P172

[4] GUNN EFFECT [J]. REPORTS ON PROGRESS IN PHYSICS, 1967, 30 : 97 - +

[5] THEORY OF STABLE DOMAIN PROPAGATION IN GUNN EFFECT [J]. PHYSICS LETTERS, 1965, 19 (07): : 546 - &

[6] CALCULATION OF VELOCITY-FIELD CHARACTERISTIC FOR GALLIUM ARSENIDE [J]. PHYSICS LETTERS, 1966, 21 (05): : 489 - &

[7] CAULTON M, 1965, RCA REV, V26, P266

[8] DIRECT OBSERVATION OF DRIFT VELOCITY AS A FUNCTION OF ELECTRIC FIELD IN GALLIUM ARSENIDE [J]. APPLIED PHYSICS LETTERS, 1966, 9 (08) : 283 - +

[9] CONWELL EM, 1966, J PHYS SOC JPN, VS 21, P527

[10] A NEW MODE OF OPERATION FOR BULK NEGATIVE RESISTANCE OSCILLATORS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (10): : 1479 - +

[1] DETERMINATION OF NEGATIVE DIFFERENTIAL MOBILITY OF N-TYPE GALLIUM ARSENIDE USING 8MM-MICROWAVES [J]. PHYSICS LETTERS A, 1967, A 24 (04) : 200 - &

[2] BOARDMAN AL, IN PRESS

[3] BOTT IB, 1967, 1966 P INT S GAAS RE, P172

[4] GUNN EFFECT [J]. REPORTS ON PROGRESS IN PHYSICS, 1967, 30 : 97 - +

[5] THEORY OF STABLE DOMAIN PROPAGATION IN GUNN EFFECT [J]. PHYSICS LETTERS, 1965, 19 (07): : 546 - &

[6] CALCULATION OF VELOCITY-FIELD CHARACTERISTIC FOR GALLIUM ARSENIDE [J]. PHYSICS LETTERS, 1966, 21 (05): : 489 - &

[7] CAULTON M, 1965, RCA REV, V26, P266

[8] DIRECT OBSERVATION OF DRIFT VELOCITY AS A FUNCTION OF ELECTRIC FIELD IN GALLIUM ARSENIDE [J]. APPLIED PHYSICS LETTERS, 1966, 9 (08) : 283 - +

[9] CONWELL EM, 1966, J PHYS SOC JPN, VS 21, P527

[10] A NEW MODE OF OPERATION FOR BULK NEGATIVE RESISTANCE OSCILLATORS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (10): : 1479 - +