HIGH-EFFICIENCY GAALAS-GAAS HETEROSTRUCTURE SOLAR-CELLS GROWN BY METALLO-ORGANIC CHEMICAL VAPOR-DEPOSITION

被引：63

作者：

DUPUIS, RD ^{[1
]}

DAPKUS, PD ^{[1
]}

YINGLING, RD ^{[1
]}

MOUDY, LA ^{[1
]}

机构：

[1] ROCKWELL INT,ANAHEIM,CA 92803

来源：

APPLIED PHYSICS LETTERS | 1977年 / 31卷 / 03期

关键词：

D O I：

10.1063/1.89647

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：201 / 203

页数：3

共 12 条

[1]

Alferov Zh. I., 1970, Fizika i Tekhnika Poluprovodnikov, V4, P2378

[2] DISTRIBUTED-FEEDBACK DOUBLE-HETEROSTRUCTURE GAAS INJECTION LASER WITH FUNDAMENTAL GRATING [J].

ANDERSON, DB ;

AUGUST, RR ;

COKER, JE .

APPLIED OPTICS, 1974, 13 (12) :2742-2744

[3] DEVICE QUALITY EPITAXIAL GALLIUM-ARSENIDE GROWN BY METAL ALKYL-HYDRIDE TECHNIQUE [J].

BASS, SJ .

JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) :172-178

[4]

CONRAD RW, 1966, J ELECTROCHEM SOC, V113, P1991

[5]

DUPUIS RD, UNPUBLISHED

[6] HIGH-PERFORMANCE SOLAR CELL MATERIAL - NORMAL-ALAS-PARA-GAAS PREPARED BY VAPOR-PHASE EPITAXY [J].

JOHNSTON, WD ;

CALLAHAN, WM .

APPLIED PHYSICS LETTERS, 1976, 28 (03) :150-152

[7] HETEROEPITAXIAL GAAS ON ALUMINUM-OXIDE - FORMATION AND ELECTRICAL PROPERTIES OF ZN-DOPED AND CD-DOPED FILMS [J].

MANASEVIT, HM ;

THORSEN, AC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (01) :99-+

[8] USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .3. STUDIES OF EPITAXIAL III-V ALUMINUM COMPOUND FORMATION USING TRIMETHYLALUMINUM [J].

MANASEVIT, HM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) :647-+

[9] USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .I. EPITAXIAL GALLIUM-V COMPOUNDS [J].

MANASEVIT, HM ;

SIMPSON, WI .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) :1725-+

[10] SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATES [J].

MANASEVIT, HM .

APPLIED PHYSICS LETTERS, 1968, 12 (04) :156-+

← 1 2 →