MICROSTRUCTURE AND THERMAL-CONDUCTIVITY OF EPITAXIAL ALN THIN-FILMS

被引：75

作者：

KUO, PK

AUNER, GW

WU, ZL

机构：

[1] WAYNE STATE UNIV,INST MFG RES,DETROIT,MI 48201

[2] WAYNE STATE UNIV,DEPT ELECT & COMP ENGN,DETROIT,MI 48201

来源：

THIN SOLID FILMS | 1994年 / 253卷 / 1-2期

关键词：

ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY; EPITAXY; SEMICONDUCTORS;

D O I：

10.1016/0040-6090(94)90324-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of AlN were grown by plasma source molecular beam epitaxy system on Si(111), Si(100), Al2O3(0001) and Al2O3(1 (1) over bar 02) substrates. X-ray studies indicated that the films were highly textured on Al2O3(0001) and Al2O3(1 (1) over bar 02), and less so on Si(111) and Si(100). The thermal conductivity of these thin films was investigated by the thermal wave-mirage technique, and a high value of 25.2 W-1 m(-1) K-1 was found for the AlN film on Al2O3(1 (1) over bar 02). The physical properties were correlated to the microstructures obtained from atomic resolution transmission electron microscopy and atomic force microscopy images.

引用

页码：223 / 227

页数：5

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