EFFECT OF DISORDER ON CONDUCTION-BAND EFFECTIVE MASS, VALENCE-BAND SPIN-ORBIT SPLITTING, AND DIRECT BAND GAP IN III-V ALLOYS

被引：118
|
作者：
BEROLO, O
WOOLLEY, JC
VANVECHT.JA
机构：
[1] UNIV OTTAWA,OTTAWA,ONTARIO,CANADA
[2] BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源：
PHYSICAL REVIEW B | 1973年 / 8卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.8.3794
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：3794 / 3798
页数：5
相关论文
共 50 条
  • [1] CONDUCTION-BAND EFFECTIVE MASS IN III-V SUBSTITUTIONAL ALLOYS
    BEROLO, O
    WOOLLEY, JC
    VANVECHT.JA
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1973, 18 (03): : 323 - 323
  • [2] Enhancement of conduction-band effective mass in III-V semiconductor alloys induced by chemical disorder
    Fan, JC
    Chen, YF
    JOURNAL OF APPLIED PHYSICS, 1996, 80 (12) : 6761 - 6765
  • [3] Valence-band anticrossing in mismatched III-V semiconductor alloys
    Alberi, K.
    Wu, J.
    Walukiewicz, W.
    Yu, K. M.
    Dubon, O. D.
    Watkins, S. P.
    Wang, C. X.
    Liu, X.
    Cho, Y. -J.
    Furdyna, J.
    PHYSICAL REVIEW B, 2007, 75 (04):
  • [4] EFFECT OF DEFORMATION ON CONDUCTION-BAND OF III-V SEMICONDUCTORS
    HOWLETT, W
    ZUKOTYNSKI, S
    PHYSICAL REVIEW B, 1977, 16 (08): : 3688 - 3693
  • [5] CONDUCTION-BAND AND VALENCE-BAND EFFECTIVE MASSES IN SPONTANEOUSLY ORDERED GAINP2
    ZHANG, Y
    MASCARENHAS, A
    PHYSICAL REVIEW B, 1995, 51 (19) : 13162 - 13173
  • [6] Valence-band splitting in Mg/W(110): Neither spin-orbit nor parity effect
    Shikin, A. M.
    Rader, O.
    PHYSICAL REVIEW B, 2007, 76 (07):
  • [7] Valence-band offsets of III-V alloy heterojunctions
    Wang, HQ
    Zheng, JC
    Wang, RZ
    Zheng, YM
    Cai, SH
    SURFACE AND INTERFACE ANALYSIS, 1999, 28 (01) : 177 - 180
  • [8] VALENCE-BAND DEFORMATION POTENTIALS FOR III-V COMPOUNDS
    WILEY, JD
    SOLID STATE COMMUNICATIONS, 1970, 8 (22) : 1865 - &
  • [9] EFFECT OF THERMAL ANNEALING ON THE CONDUCTION-BAND AND VALENCE-BAND QUANTUM SHIFTS IN POROUS SILICON
    VANBUUREN, T
    TIEDJE, T
    PATITSAS, SN
    WEYDANZ, W
    PHYSICAL REVIEW B, 1994, 50 (04): : 2719 - 2722
  • [10] Biaxial strain modulated valence-band engineering in III-V digital alloys
    Ahmed, Sheikh Z.
    Tan, Yaohua
    Zheng, Jiyuan
    Campbell, Joe C.
    Ghosh, Avik W.
    PHYSICAL REVIEW B, 2022, 106 (03)
12345