SEMICONDUCTOR-LASER AMPLIFIER AS OPTICAL SWITCHING GATE

被引：41
作者：
EHRHARDT, A
EISELT, M
GROSSKOPF, G
KULLER, L
LUDWIG, R
PIEPER, W
SCHNABEL, R
WEBER, HG
机构：
[1] Heinrich-Herta-Institut für Nachrichtentechnik, Berlin GmbH Einsteinufer 37
来源：
JOURNAL OF LIGHTWAVE TECHNOLOGY | 1993年 / 11卷 / 08期
关键词：
D O I：
10.1109/50.254087
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The properties of a semiconductor laser amplifier as optical switching gate are investigated. Particular attention is paid to gain, contrast ratio, and switching time of the device. These properties are studied experimentally and theoretically with respect to the injection current, optical input power, and cavity resonances. The experimental arrangements and the theoretical method are described. As an example of the various applications of semiconductor laser amplifier gates we report on packet switching experiments with self-routing, employing cascaded switching gates. In a theoretical analysis we investigate the restrictions that the properties of semiconductor laser amplifier gates impose on a larger switching system consisting of many such gates.
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收藏
页码：1287 / 1295
页数：9
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