INFLUENCE OF GROWTH-CONDITIONS ON TIN INCORPORATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引:37
作者
ALEXANDRE, F
RAISIN, C
ABDALLA, MI
BRENAC, A
MASSON, JM
机构
关键词
D O I
10.1063/1.328248
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:4296 / 4304
页数:9
相关论文
共 21 条
[1]  
ABDALLA MI, 1977, FRANCO BRIT MBE C GR
[2]  
ALEXANDRE F, UNPUBLISHED
[3]   AUTOMATIC CARRIER CONCENTRATION PROFILE PLOTTER USING AN ELECTROCHEMICAL TECHNIQUE [J].
AMBRIDGE, T ;
FAKTOR, MM .
JOURNAL OF APPLIED ELECTROCHEMISTRY, 1975, 5 (04) :319-328
[4]   DIRECTIONAL COUPLER SWITCH IN MOLECULAR-BEAM EPITAXY GAAS [J].
CARENCO, A ;
MENIGAUX, L ;
ALEXANDRE, F ;
ABDALLA, M ;
BRENAC, A .
APPLIED PHYSICS LETTERS, 1979, 34 (11) :755-757
[5]  
Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9
[6]   IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY [J].
CHO, AY .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) :1733-1735
[8]   INTERFACE AND DOPING PROFILE CHARACTERISTICS WITH MOLECULAR-BEAM EPITAXY OF GAAS - GAAS VOLTAGE VARACTOR [J].
CHO, AY ;
REINHART, FK .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) :1812-1817
[9]   UNINTENTIONAL DOPANTS INCORPORATED IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].
COVINGTON, DW ;
MEEKS, EL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (03) :847-850
[10]  
Ilegems M., 1975, J APPL PHYS, V46, P3059