GROWTH OF QUARTZ FROM AMORPHOUS SILICA AT AMBIENT PRESSURE

被引：28

作者：

DEVAUD, G ^{[1
]}

HAYZELDEN, C ^{[1
]}

AZIZ, MJ ^{[1
]}

TURNBULL, D ^{[1
]}

机构：

[1] HARVARD UNIV,DIV APPL SCI,CAMBRIDGE,MA 02138

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 134卷 / 1-2期

关键词：

D O I：

10.1016/0022-3093(91)90020-7

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The growth of quartz into amorphous silica has been observed for the first time at atmospheric pressure. Ion implantation and ion channeling techniques were used to create and monitor the thickness of a surface amorphous layer on a quartz crystal. The growth rate at an (0001) surface is consistent with extrapolations of earlier measurements of the growth rate at higher pressures and temperatures.

引用

页码：129 / 132

页数：4

共 7 条

[1]

CZEPREGI L, 1978, J APPL PHYS, V49, P3906

[2] DEPENDENCE OF GROWTH-RATE OF QUARTZ IN FUSED-SILICA ON PRESSURE AND IMPURITY CONTENT [J].