POLARIZATION INSENSITIVE TRAVELING-WAVE TYPE AMPLIFIER USING STRAINED MULTIPLE QUANTUM-WELL STRUCTURE

被引:50
作者
MAGARI, K
OKAMOTO, M
YASAKA, H
SATO, K
NOGUCHI, Y
MIKAMI, O
机构
[1] NTT-Electronics Laboratories
关键词
D O I
10.1109/68.58047
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Signal gain agreement between TE and TM modes is realized under a specific operation condition in a traveling wave type amplifier using a strained multiple quantum well structure for the first time. © 1990 IEEE
引用
收藏
页码:556 / 558
页数:3
相关论文
共 8 条
[1]   ENERGY BAND-GAP SHIFT WITH ELASTIC STRAIN IN GAXIN1-XP EPITAXIAL LAYERS ON (001) GAAS SUBSTRATES [J].
ASAI, H ;
OE, K .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) :2052-2056
[2]   1.5-MU-M BAND TRAVELING-WAVE SEMICONDUCTOR OPTICAL AMPLIFIERS WITH WINDOW FACET STRUCTURE [J].
CHA, I ;
KITAMURA, M ;
HONMOU, H ;
MITO, I .
ELECTRONICS LETTERS, 1989, 25 (18) :1241-1242
[3]   POLARIZATION-INSENSITIVE, NEAR-TRAVELING-WAVE SEMICONDUCTOR-LASER AMPLIFIERS AT 1.5-MU-M [J].
COLE, S ;
COOPER, DM ;
DEVLIN, WJ ;
ELLIS, AD ;
ELTON, DJ ;
ISAAC, JJ ;
SHERLOCK, G ;
SPURDENS, PC ;
STALLARD, WA .
ELECTRONICS LETTERS, 1989, 25 (05) :314-315
[4]   LARGE-SIGNAL AND SMALL-SIGNAL GAIN CHARACTERISTICS OF 1.5-MU-M MULTIPLE QUANTUM-WELL OPTICAL AMPLIFIERS [J].
EISENSTEIN, G ;
KOREN, U ;
RAYBON, G ;
KOCH, TL ;
WIESENFELD, JM ;
WEGENER, M ;
TUCKER, RS ;
MILLER, BI .
APPLIED PHYSICS LETTERS, 1990, 56 (13) :1201-1203
[5]  
GROSSKOPF G, 1987, ELECTRON LETT, V23, P1387, DOI 10.1049/el:19870957
[6]  
MAGARI K, 3RD OPT C OEC 89
[7]  
OLSSON NA, 1990, ELECTRON LETT, V25, P1049
[8]   BEHAVIOR OF THRESHOLD CURRENT AND POLARIZATION OF STIMULATED EMISSION OF GAAS INJECTION LASERS UNDER UNIAXIAL STRESS [J].
PATEL, NB ;
RIPPER, JE ;
BROSSON, P .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) :338-341