C-60 FILMS FORMED BY IONIZED CLUSTER BEAM DEPOSITION - STRUCTURE AND DOPING BY ION-IMPLANTATION

被引：4
作者：
SHI, Y
YU, T
LIU, C
LI, SN
GUO, HX
FAN, XJ
机构：
[1] Accelerator Laboratory, Department of Physics Wuhan University, Wuhan
来源：
FULLERENE SCIENCE AND TECHNOLOGY | 1995年 / 3卷 / 05期
关键词：
D O I：
10.1080/153638X9508543801
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
C(6)0 films were formed on a variety of substrates by ionized cluster beam (ICB) technique. Their structure was found to depend on the acceleration voltages and substrate. Then the C(6)0 films were implanted by p(+)-ions with doses from 0-2X10(14) ion/cm(2). The in situ measurement of electrical conductivity revealed an abrupt decrease of three orders in resistance. The temperature coefficient of resistivity of the p(+)-ion implanted C(6)0 film remained in a negative value.
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页码：469 / 478
页数：10
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